• DocumentCode
    1035235
  • Title

    Analysis of a PIN photodiode with integrated waveguide

  • Author

    Amann, M.-C.

  • Author_Institution
    Siemens AG, Research Laboratories, Mÿnchen, West Germany
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    895
  • Lastpage
    897
  • Abstract
    The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for ¿ = 1.3 ¿m. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15 dB/¿m, enabling reduced detector length and smaller capacitance.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical waveguides; photodiodes; 1.3 micron; InGaAs photodiode; InGaAs-InGaAsP-InP; InGaAsP-InP waveguide; absorption coefficient; integrated waveguide; mode-matching technique; optimised device structure; reduced detector length; smaller capacitance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870633
  • Filename
    4257971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035235