Title :
GaAs lateral bipolar transistor with field-separated carriers
Author :
Ueda, Daisuke ; Takagi, Hiroyuki ; Kano, G. ; Teramoto, I.
Author_Institution :
Matsushita Electronics Corporation, Electronics Research Laboratory, Takatsuki, Japan
Abstract :
A new type of GaAs lateral bipolar transistor has been developed by introducing an n-i-p-i-n structure where the electric field is applied perpendicular to the direction of carrier injection in order for the carriers to be separated. The diffusion length is increased owing to the increase of lifetime due to the spatial separation of injected carriers, resulting in the increase of current gain.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; GaAs; III-V semiconductors; carrier injection; current gain increase; diffusion length; field-separated carriers; lateral bipolar transistor; lifetime; n- i- p- i- n structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870635
