Title :
Monolithic 2-6 GHz limiting amplifier
Author :
Majidi-Ahy, R. ; Omori, Mutsumi ; Stoneham, E.
Author_Institution :
Microwave Technology Inc., Fremont, USA
Abstract :
A four-stage 2-6 GHz limiting amplifier has been developed based on a single-stage GaAs MMIC amplifier chip. The limiting amplifier is optimised for sharp linear-to-saturation power characteristics with less than 4 dB difference between minimum P1dB (1 dB gain compression point) and maximum Psat (saturated output power) over frequency and temperature (-55°C to 85°C). The small-signal gain of the limiting amplifier at room temperature is 22.5 dB with gain flatness of ±0.5 dB, with less than 1.7:1 input and output VSWR over the band.
Keywords :
field effect integrated circuits; microwave amplifiers; microwave integrated circuits; -55 to 85 °C; 2 to 6 GHz; 22.5 dB; 4 GHz; FET; GaAs; MMIC amplifier chip; SHF; four-stage; limiting amplifier; monolithic microwave IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870643
