DocumentCode :
1035360
Title :
Simple physical model for the injection efficiency of diffused p-n junctions
Author :
Downing, J.P.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
245
Lastpage :
245
Keywords :
Charge carrier lifetime; Delay effects; Epitaxial layers; Impurities; Kirk field collapse effect; Laboratories; P-n junctions; Predictive models; Radiative recombination; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16667
Filename :
1475709
Link To Document :
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