DocumentCode
1035360
Title
Simple physical model for the injection efficiency of diffused p-n junctions
Author
Downing, J.P.
Volume
16
Issue
2
fYear
1969
fDate
2/1/1969 12:00:00 AM
Firstpage
245
Lastpage
245
Keywords
Charge carrier lifetime; Delay effects; Epitaxial layers; Impurities; Kirk field collapse effect; Laboratories; P-n junctions; Predictive models; Radiative recombination; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16667
Filename
1475709
Link To Document