Title :
Simple physical model for the injection efficiency of diffused p-n junctions
fDate :
2/1/1969 12:00:00 AM
Keywords :
Charge carrier lifetime; Delay effects; Epitaxial layers; Impurities; Kirk field collapse effect; Laboratories; P-n junctions; Predictive models; Radiative recombination; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16667