DocumentCode :
1035369
Title :
Reverse current-voltage characteristics of metal silicide Schottky diodes
Author :
Lepselter, M.P.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
246
Lastpage :
246
Keywords :
Acoustical engineering; Current-voltage characteristics; Detectors; Doping profiles; Schottky barriers; Schottky diodes; Silicides; Silicon; Telephony; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16668
Filename :
1475710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1035369
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