Title :
CIP: A new technique for measuring doping profiles
fDate :
2/1/1969 12:00:00 AM
Keywords :
Acoustical engineering; Detectors; Doping profiles; Frequency; Interface states; Optical scattering; Schottky barriers; Schottky diodes; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16669