Title :
InGaAs/InP SAGM avalanche photodiodes incorporating a pseudoquaternary superlattice graded heterojunction grown by atmospheric-pressure MOCVD
Author :
Moseley, A.J. ; Urquhart, J. ; Hodson, P.D. ; Riffat, J.R. ; Davies, J.I.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
We have demonstrated a high-speed GaInAs/InP SAGM avalanche photodiode grown by atmospheric-pressure MOCVD which incorporates a graded-bandgap GaInAs/InP superlattice layer to overcome hole pile-up effects inherent in the basic SAM devices. This approach offers considerable interface design flexibility without recourse to GaInAsP quaternary compositions. High-speed operation has been demonstrated without compromising the dark current or gain by the inclusion of the multiple heterojunctions of the superlattice.
Keywords :
III-V semiconductors; avalanche photodiodes; chemical vapour deposition; gallium arsenide; indium compounds; optical communication equipment; semiconductor superlattices; APD; Avalanche photodiodes; III-V semiconductors; InGaAs-InP; SAGM; SAM devices; atmospheric pressure MOCVD; graded heterojunction; graded-bandgap; high speed; hole pile-up effects; optical receivers; pseudoquaternary superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870646
