Title :
High-speed 2 Ã\x97 2 electrically driven spatial light modulator made with GaAs/AlGaAs multiple quantum wells(MQWs)
Author :
Wood, T.H. ; Carr, E.C. ; Burrus, C.A. ; Henry, J.E. ; Gossard, A.C. ; English, J.H.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
A 2 × 2 array of individually driven MQW modulators has been fabricated. Because of the large electroabsorption effect in MQWs, good on/off ratios can be achieved in a single pass through a set of 50 MQWs. Each device has an on/off ratio of approximately 1.45 : 1, and the modulator displays rise and fall times of roughly 400 ps.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; integrated optoelectronics; optical information processing; optical modulation; 400 ps; III-V semiconductors; MQW; electrically driven spatial light modulator; electroabsorption effect; information processing applications; multiple quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870647
