DocumentCode
1035428
Title
Impedance switching effects in GaAs/AlAs barrier structures
Author
Campbell, A.C. ; Kesan, V.P. ; Crook, V. P Kesan G E ; Maziar, C.M. ; Neikirk, D.P. ; Streetman, B.G.
Author_Institution
University of Texas at Austin, Microelectronics Research Center and Electronics Research Center, Austin, USA
Volume
23
Issue
18
fYear
1987
Firstpage
926
Lastpage
927
Abstract
AlAs tunnel barriers in MBE-grown GaAs layers have been studied using pulsed and continuous I/V and swept temperature/capacitance measurements. Such layers demonstrate an impedance switching phenomenon which is persistent and repeatable. This impedance switching is manifested by the device as two distinct impedance modes: a high-impedance mode (of the order of 10k¿ at DC for a 0.3 mm dot), and a low-impedance mode (of the order of 10¿). Such a phenomenon may restrict the operation of some devices, but may lead to other novel applications.
Keywords
III-V semiconductors; aluminium compounds; electric impedance; gallium arsenide; semiconductor junctions; switching; tunnelling; AlAs tunnel barriers; GaAs-AlAs barrier structures; MBE-grown GaAs layers; continuous I/V measurements; high-impedance mode; impedance switching; low-impedance mode; pulsed I/V measurements; semiconductor junctions; swept temperature/capacitance measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870652
Filename
4257991
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