Title :
Design of a tunable GaAs/AlGaAs multiple-quantum-well resonant-cavity photodetector
Author :
Lai, Kafai ; Campbell, Joe C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
1/1/1994 12:00:00 AM
Abstract :
We describe a tunable p-i-n photodetector using GaAs/AlGaAs multiple quantum wells (MQW) embedded in a vertical resonant cavity. The structure is similar to that employed for Fabry-Perot MQW modulators and lasers. Turnability is achieved by utilizing the quantum-confined Stark effect. The calculated response predicts a tuning range up to 20 nm. As a dual-channel wavelength-division demultiplexer, the crosstalk ratio is calculated to be <-5 dB for one channel and <-15 dB for the other. The quantum efficiencies are projected to be in the range of 40% to 55%
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; multiplexing equipment; optical resonators; photodetectors; semiconductor quantum wells; tuning; wavelength division multiplexing; 40 to 55 percent; Fabry-Perot MQW modulators; GaAs-AlGaAs; GaAs/AlGaAs; MQW; MQW resonant cavity photodetector design; crosstalk ratio; dual-channel wavelength-division demultiplexer; lasers; multiple-quantum-well resonant-cavity photodetector; quantum efficiencies; quantum-confined Stark effect; tunable p-i-n photodetector; tuning range; vertical resonant cavity; Fabry-Perot; Gallium arsenide; Laser tuning; PIN photodiodes; Photodetectors; Quantum well devices; Quantum well lasers; Resonance; Stark effect; Tunable circuits and devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
