Title :
Detectivity of a three-level quantum-well detector
Author_Institution :
Central Res. Lab., Thomson-CSF, Orsay, France
fDate :
1/1/1994 12:00:00 AM
Abstract :
We have calculated the noise properties of a three-level metastable photocapacitive intersubband quantum-well detector. It is shown that while a large gain in responsivity is obtainable by using a three-level system, a good detectivity requires a very effective blocking of the tunneling relaxation from the metastable state to the ground state
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photocapacitance; photodetectors; semiconductor device noise; tunnelling; AlGaAs-GaAs; good detectivity; ground state; large gain; metastable state; noise properties; responsivity; three-level metastable photocapacitive intersubband quantum-well detector; three-level quantum-well detector detectivity; three-level system; tunneling relaxation blocking; Detectors; Electrons; Frequency; Lighting; Metastasis; Noise level; Quantum wells; Stationary state; Tunneling; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
