Title :
Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
Author :
Houston, P.A. ; Blaauw, C. ; Margittai, A. ; Svilans, M.N. ; Puetz, N. ; Day, D.J. ; Shepherd, F.R. ; SpringThorpe, A.J.
Author_Institution :
Bell-Northern Research, Ottawa, Canada
Abstract :
Double-heterojunction bipolar transistor structures in InP/GaInAs have been grown by low-pressure metal organic chemical vapour deposition. Good control of the Zn dopant in the GaInAs base layer was achieved, and devices with current gains up to 300 at current densities of 1.4kA/cm2 have been demonstrated.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; InP-GaInAs:Zn; Zn dopant; bipolar transistors; double heterojunction device; low pressure MOCVD; metal organic chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870656
