L- and S-Band Compact Octave Bandwidth 4-bit MMIC Phase Shifters

Author

Bahl, Inder J. ; Conway, David

Author_Institution

Tyco Electron., Roanoke

Volume

56

Issue

2

fYear

2008

Firstpage

293

Lastpage

299

Abstract

This paper presents the design approach and test results of L- and S-band compact monolithic microwave integrated circuit (MMIC) phase shifters (PSs) developed for octave band applications. The PS designs were based on an optimum topology selected for each bit for compact size and low insertion loss, and have on-chip integrated digital control. The MMIC PSs were fabricated employing GaAs-based high-performance 0.4-mum MSAG MESFET technology with multilevel-plating process. We achieved a chip size of 2.6 mm², the smallest size reported to date.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; gallium arsenide; integrated circuit design; integrated circuit testing; GaAs; L-band octave bandwidth applications; MMIC phase shifters; MSAG MESFET technology; S-band compact octave bandwidth; insertion loss; integrated digital drivers; monolithic microwave integrated circuit phase shifters design; multifunction self-aligned gate process; multilevel-plating process; on-chip integrated digital control; optimum topology selection; size 0.4 mum; test approach; Application specific integrated circuits; Bandwidth; Circuit testing; Circuit topology; Insertion loss; Integrated circuit testing; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Phase shifters; 4-bit phase shifters (PSs); $L$-band PSs; $S$-band PSs; multibit PSs;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2007.914636

Filename

4431831