Title :
High-power operation of a transverse-mode stabilised AlGaInp visible light (λL = 683 nm) semiconductor laser
Author :
Fujii, Hiromitsu ; Kobayashi, Kaoru ; Kawata, Shigeo ; Gomyo, A. ; Hino, I. ; Hotta, Hitoshi ; Suzuki, Takumi
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Continuous-wave (CW), stable fundamental-mode operation, up to 20 mW, was achieved with transverse-mode stabilised MOVPE-grown AlGaInP visible-light (λL = 683 nm) lasers. The CW threshold current was 67 mA and the external quantum efficiency was 41%. Up to 27 mW CW power was obtained from this laser diode.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 20 to 27 mW; 41 percent; 683 nm; AlGaInP; CW threshold current; III-V semiconductors; MOVPE-grown; external quantum efficiency; high power operation; laser diode; semiconductor laser; stable fundamental-mode operation; transverse-mode stabilised; visible light;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870661
