DocumentCode :
1035609
Title :
Low-noise epitaxial GaAs avalanche diode amplifiers
Author :
Kuno, H.J. ; Collard, J.R. ; Gobat, A.R.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
251
Lastpage :
251
Keywords :
Frequency; Gallium arsenide; Lifetime estimation; Low-noise amplifiers; Noise figure; P-n junctions; Pulse amplifiers; Pulse measurements; Semiconductor diodes; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16694
Filename :
1475736
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1035609
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