• DocumentCode
    1035614
  • Title

    Wideband monolithic GaAs amplifier using cascodes

  • Author

    Colleran, W.T. ; Abidi, A.A.

  • Author_Institution
    University of California, Integrated Circuits & Systems Laboratory, Electrical Engineering Department, Los Angeles, USA
  • Volume
    23
  • Issue
    18
  • fYear
    1987
  • Firstpage
    951
  • Lastpage
    952
  • Abstract
    A monolithic matched, two-stage wideband amplifier with an insertion gain of 26dB and a ¿ 3dB bandwidth of 3-2GHz is reported. Optimally designed cascode circuits are used to enhance the gain-bandwidth product available per stage. The IC has been fabricated in a I¿ depletion GaAs MESFET technology.
  • Keywords
    III-V semiconductors; field effect integrated circuits; microwave amplifiers; microwave integrated circuits; wideband amplifiers; 26 dB; 3.2 GHz; GaAs; III-V semiconductors; MESFET technology; cascode circuits; gain-bandwidth product; insertion gain; two-stage wideband amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870669
  • Filename
    4258008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035614