Title :
The amplifying gate thyristor
Author :
Gentry, F.E. ; Moyson, J.
fDate :
2/1/1969 12:00:00 AM
Keywords :
Circuits; Doping; Fabrication; Frequency; Gold; P-i-n diodes; Silicon; Temperature; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16696
