Title :
Characteristics for Bloch line memory with field access scheme
Author :
Mizuno, K. ; Matsutera, H. ; Kawahara, H. ; Hidaka, Y.
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
The characteristics of functions such as read/write gate operation and vertical Bloch line (VBL) propagation have been investigated for a VBL memory with a field access scheme. The memory is compared of a minor loop utilizing a stabilized ring-shaped domain and a read/write gate with three-level conductor patterns. Potential wells that define the VBL bit position are formed by an in-plane field from a zigzag conductor for evaluation of VBL propagation. The read/write gate and VBL pair propagation operations are confirmed. A bias field margin of 7 Oe (10%) is obtained, verifying the feasibility of this device
Keywords :
magnetic bubble memories; magnetic domain walls; Bloch line memory; VBL memory; VBL pair propagation; VBL propagation; bias field margin; characteristics; feasibility; field access scheme; in-plane field; minor loop; operation; read/write gate operation; stabilized ring-shaped domain; three-level conductor patterns; vertical Bloch line; vertical Bloch line memory; vertical Bloch line propagation; zigzag conductor; Conductive films; Conductors; Laboratories; Magnetic heads; Magnetization; Microelectronics; National electric code; Potential well; Read-write memory; Testing;
Journal_Title :
Magnetics, IEEE Transactions on
