• DocumentCode
    1035677
  • Title

    Experimental study of Bloch line memory initialization

  • Author

    Zimmermann, L. ; Boileau, F. ; Arnaud, L. ; Desloges, B.

  • Author_Institution
    SAGEM, Eragny, France
  • Volume
    25
  • Issue
    5
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    4245
  • Lastpage
    4247
  • Abstract
    In Bloch line memories magnetic domain walls are used as storage loops for shift registers. A preliminary condition for device operation is to set the domain walls at given positions where they will remain stable. It is then necessary to control the wall state of these domains and to manipulate the domain heads for write and read operation. The authors present structures which have been designed and realized for that goal and the results of device operation for the preliminary step. A simple, reliable procedure for nucleating an array of parallel domains is presented. Grooving the garnet proves efficient in stabilizing the domain walls. The influence of material parameters is discussed as well as the application of this initialization procedure to further studies
  • Keywords
    magnetic bubble memories; magnetic domain walls; Bloch line memories; Bloch line memory initialization; condition for device operation; domain array nucleation; domain head manipulation; garnet grooving for stabilising domain walls; influence of material parameters; initialization procedure; magnetic domain walls; read operation; reliable procedure; shift registers; storage loops; write operation; Conducting materials; Conductive films; Etching; Garnet films; Geometry; Ion implantation; Magnetic domain walls; Magnetic heads; Magnetic materials; Shift registers;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.42583
  • Filename
    42583