DocumentCode :
1035677
Title :
Experimental study of Bloch line memory initialization
Author :
Zimmermann, L. ; Boileau, F. ; Arnaud, L. ; Desloges, B.
Author_Institution :
SAGEM, Eragny, France
Volume :
25
Issue :
5
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
4245
Lastpage :
4247
Abstract :
In Bloch line memories magnetic domain walls are used as storage loops for shift registers. A preliminary condition for device operation is to set the domain walls at given positions where they will remain stable. It is then necessary to control the wall state of these domains and to manipulate the domain heads for write and read operation. The authors present structures which have been designed and realized for that goal and the results of device operation for the preliminary step. A simple, reliable procedure for nucleating an array of parallel domains is presented. Grooving the garnet proves efficient in stabilizing the domain walls. The influence of material parameters is discussed as well as the application of this initialization procedure to further studies
Keywords :
magnetic bubble memories; magnetic domain walls; Bloch line memories; Bloch line memory initialization; condition for device operation; domain array nucleation; domain head manipulation; garnet grooving for stabilising domain walls; influence of material parameters; initialization procedure; magnetic domain walls; read operation; reliable procedure; shift registers; storage loops; write operation; Conducting materials; Conductive films; Etching; Garnet films; Geometry; Ion implantation; Magnetic domain walls; Magnetic heads; Magnetic materials; Shift registers;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.42583
Filename :
42583
Link To Document :
بازگشت