DocumentCode
1035800
Title
Measurement of MOS current mismatch in the weak inversion region
Author
Forti, Francesco ; Wright, Michael E.
Author_Institution
Lawrence Berkeley Lab., CA, USA
Volume
29
Issue
2
fYear
1994
fDate
2/1/1994 12:00:00 AM
Firstpage
138
Lastpage
142
Abstract
Measures the current matching properties of MOS transistors operated in the weak inversion region. The authors measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and report the results in terms of mismatch dependance on current density, device dimensions, and substrate voltage, without using any specific model for the transistor
Keywords
carrier density; insulated gate field effect transistors; inversion layers; MOS current mismatch; MOS transistors; NMOS transistors; PMOS transistors; current density; current matching properties; device dimensions; substrate voltage; weak inversion region; Circuits; Current density; Current measurement; Density measurement; Extraterrestrial measurements; Fluctuations; MOS devices; MOSFETs; Size measurement; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.272119
Filename
272119
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