Title :
Hydrogen plasma etching of amorphous and microcrystalline silicon
Author :
van Oort, R.C. ; Geerts, M.J. ; van den Heuvel, J.C. ; Metselaar, J.W.
Author_Institution :
Technical University of Delft, Faculty of Electrical Engineering, Delft, Netherlands
Abstract :
The etching of amorphous and microcrystalline silicon films in a hydrogen plasma has been investigated. For amorphous silicon an etch rate of 2.4 A/s was found. Microcrystalline silicon is etched at a rate of 0.3 A/s. Microcrystalline silicon consists of two phases. The amorphous part is removed preferably.
Keywords :
amorphous semiconductors; elemental semiconductors; semiconductor thin films; silicon; sputter etching; H2 plasma; Si; amorphous; etch rate; microcrystalline; phases; plasma etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870680
