Title :
Fast and dense low-power multiple-valued I2L circuit
Author :
Chao, Q.P. ; Tang, Zhen
Author_Institution :
Jiao Tong University, Department of Electronics, Shanghai, China
Abstract :
A fast and dense low-power multiple-valued I2L circuit that can be made in a standard Schottky process with double-layer metallisation is proposed. The circuit consists of pnp and npn current mirrors. Schottky diodes and a normally operated threshold npn transistor with a merged pnp transistor to clamp the npn transistor and prevent the npn from going too deeply into saturation. Propagation delay times below 1 ns can be obtained.
Keywords :
Schottky-barrier diodes; integrated injection logic; 1 ns; Schottky diodes; current mirrors; delay times; double-layer metallisation; low-power multiple-valued I2L circuit; merged p n p transistor; normally operated threshold n p n transistor; standard Schottky process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870681
