DocumentCode
1035823
Title
A novel approach to controlled programming of tunnel-based floating-gate MOSFETs
Author
Lanzoni, M. ; Briozzo, L. ; Riccò, B.
Author_Institution
Dipartimento di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
Volume
29
Issue
2
fYear
1994
fDate
2/1/1994 12:00:00 AM
Firstpage
147
Lastpage
150
Abstract
This paper presents a new approach to obtain automatic and accurate control of the threshold voltage of floating-gate MOSFETs programmable by means of tunneling current. The proposed method avoids using a series of partial write/erase operations followed by measurements and adjustment steps, thus achieving a significant advantage in terms of programming time for the same accuracy. The simplicity of the proposed method and its inherent speed make it ideal in a wide range of possible applications
Keywords
EPROM; MOS integrated circuits; integrated memory circuits; EPROM; partial write/erase operations; programming time; threshold voltage; tunnel-based floating-gate MOSFETs; tunneling current; Aging; Automatic control; Automatic programming; Electrons; MOSFET circuits; Nonvolatile memory; Threshold voltage; Time measurement; Tunneling; Voltage control;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.272121
Filename
272121
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