• DocumentCode
    1035824
  • Title

    Avalanche noise associated with gate current of Si JFET

  • Author

    Peransin, J.M. ; Rigaud, D. ; Alabedra, R.

  • Author_Institution
    Universite des Sciences et Techniques du Languedoc, Centre d´´Electronique de Montpellier, Unitée associé CNRS UA 391, Montpellier, France
  • Volume
    23
  • Issue
    18
  • fYear
    1987
  • Firstpage
    970
  • Lastpage
    971
  • Abstract
    Measurements are reported on the noise behaviour of the gate current in n-channel JFETs. Various bias conditions have been used to investigate the initial stage of the avalanche effect. It is shown that the Ieq noise varies with Ig if the avalanche effect is located in the channel and with 14g in the case of ionisation due to a high field at the gate junction.
  • Keywords
    electron device noise; junction gate field effect transistors; Si; avalanche effect; bias conditions; gate current; gate junction; high field; ionisation; n-channel JFETs; noise behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870682
  • Filename
    4258750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035824