DocumentCode :
1035832
Title :
A monolithic GaAs low power L-band successive detection logarithmic amplifier
Author :
Scheinberg, N. ; Michels, R.
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Volume :
29
Issue :
2
fYear :
1994
fDate :
2/1/1994 12:00:00 AM
Firstpage :
151
Lastpage :
154
Abstract :
This paper describes a temperature compensated L-band GaAs MMIC successive detection logarithmic amplifier featuring low power consumption. The amplifier achieved log-linearity of ±2.5 dB and a dynamic range of 60 dB over a 100°C temperature range. This device shows no sacrifice of performance over larger, labor intensive hybrid MIC approaches
Keywords :
III-V semiconductors; MMIC; compensation; field effect integrated circuits; gallium arsenide; microwave amplifiers; ultra-high-frequency amplifiers; 500 MHz to 1.2 GHz; GaAs; GaAs MMIC; L-band; MESFET circuit; UHF amplifier; low power consumption; monolithic microwave IC; successive detection logarithmic amplifier; temperature compensation; Detectors; Dynamic range; Energy consumption; Gallium arsenide; L-band; Monolithic integrated circuits; Performance gain; Power amplifiers; Radiofrequency amplifiers; Temperature;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.272122
Filename :
272122
Link To Document :
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