• DocumentCode
    1035832
  • Title

    A monolithic GaAs low power L-band successive detection logarithmic amplifier

  • Author

    Scheinberg, N. ; Michels, R.

  • Author_Institution
    Anadigics Inc., Warren, NJ, USA
  • Volume
    29
  • Issue
    2
  • fYear
    1994
  • fDate
    2/1/1994 12:00:00 AM
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    This paper describes a temperature compensated L-band GaAs MMIC successive detection logarithmic amplifier featuring low power consumption. The amplifier achieved log-linearity of ±2.5 dB and a dynamic range of 60 dB over a 100°C temperature range. This device shows no sacrifice of performance over larger, labor intensive hybrid MIC approaches
  • Keywords
    III-V semiconductors; MMIC; compensation; field effect integrated circuits; gallium arsenide; microwave amplifiers; ultra-high-frequency amplifiers; 500 MHz to 1.2 GHz; GaAs; GaAs MMIC; L-band; MESFET circuit; UHF amplifier; low power consumption; monolithic microwave IC; successive detection logarithmic amplifier; temperature compensation; Detectors; Dynamic range; Energy consumption; Gallium arsenide; L-band; Monolithic integrated circuits; Performance gain; Power amplifiers; Radiofrequency amplifiers; Temperature;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.272122
  • Filename
    272122