Title :
Type conversion in CdxHg1-xTe by ion beam treatment
Author :
Blackman, M.V. ; Charlton, D.E. ; Jenner, M.D. ; Purdy, D.R. ; Wotherspoon, J.T.M. ; Elliott, C.T. ; White, Amanda M.
Author_Institution :
Mullard Limited, Southampton, UK
Abstract :
Conversion of vacancy-doped p-type cadmium mercury telluride to n-type by rapid diffusion of mercury interstitials created during ion bombardment is rate-limited by the dose and requires neither donor ions nor postannealing.
Keywords :
II-VI semiconductors; cadmium compounds; ion beam applications; ion beam effects; mercury compounds; p-n homojunctions; photodiodes; semiconductor doping; Ar ion beam; CdxHg1-xTe; Hg rapid diffusion; ion beam treatment; ion bombardment; photodiodes; rate-limited; type conversion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870687
