• DocumentCode
    1035957
  • Title

    Study of the inversion layer mobility and the improvement in gmof MOSFET

  • Author

    Nishi, Yoshio ; Tanaka, Kiyoshi

  • Volume
    16
  • Issue
    2
  • fYear
    1969
  • fDate
    2/1/1969 12:00:00 AM
  • Firstpage
    258
  • Lastpage
    258
  • Keywords
    Absorption; FETs; Laboratories; MOSFET circuits; Paramagnetic materials; Paramagnetic resonance; Quantization; Semiconductor device noise; Thermal resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16731
  • Filename
    1475773
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035957