A 0.25 × 106bit, high-density, low-power NDRO film memory

A number of partially populated NDRO film arrays employing 2-layer films were constructed and tested to demonstrate that high-performance low-power NDRO film memories can be made with read and write requirements which are compatible with integrated circuits. Test arrays were made in which two or four turns of fine wire were used for word lines spaced on 0.010-inch centers. The read word current for the arrays with 2-turn word lines was nominally 75 mA and the write word current was 180 mA. Digit current for all arrays was approximately 35 mA. The read word current for the array with 4-turn word lines was nominally 30 mA and the write word current was 85 mA.