DocumentCode
10362
Title
Neutron Cross-Section of N-Modular Redundancy Technique in SRAM-Based FPGAs
Author
Tarrillo, Jimmy ; Lima Kastensmidt, Fernanda ; Rech, P. ; Frost, Christopher ; Valderrama, Carlos
Author_Institution
Inst. de Inf., UFRGS, Porto Alegre, Brazil
Volume
61
Issue
4
fYear
2014
fDate
Aug. 2014
Firstpage
1558
Lastpage
1566
Abstract
In this paper the fault-masking capability of N-modular redundancy systems synthesized into SRAM-based FPGAs is evaluated. In the proposed N-modular technique an original self-adaptive majority voter elects the outputs of the redundant modules. Experimentally evaluated neutron cross-section, area, and power consumption were analyzed for different numbers of redundant modules, ranging from 3 copies (standard TMR) up to 7 copies.
Keywords
SRAM chips; field programmable gate arrays; integrated circuit reliability; neutron effects; radiation hardening (electronics); N-modular redundancy technique; SRAM based FPGA; fault masking capability; neutron cross-section; original self-adaptive majority voter; redundant module; triple modular redundancy; Circuit faults; Field programmable gate arrays; Nuclear magnetic resonance; Power demand; Redundancy; Tunneling magnetoresistance; Fault tolerance; N-modular redundancy; SRAM-based FPGAs;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2343259
Filename
6870672
Link To Document