DocumentCode
1036216
Title
MOCVD-grown AlGaAs/GaAs HBTs with epitaxially embedded p+ layers in extrinsic base
Author
Taira, K. ; Kawai, H. ; Kaneko, K.
Author_Institution
Sony Corporation, Research Center, Yokohama, Japan
Volume
23
Issue
19
fYear
1987
Firstpage
989
Lastpage
990
Abstract
AlGaAs/GaAs HBTs having a 300 Ã… base were grown by two-stage MOCVD. In the second stage, p+ layers were epitaxially embedded in the extrinsic base to make the base contact. The current through the parasitic pn interface between the emitter and the embedded p+ layers was negligible. The technique employed here makes undamaged narrow-base HBTs possible.
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; chemical vapour deposition; gallium arsenide; semiconductor growth; AlGaAs-GaAs; base contact; extrinsic base; narrow-base HBTs; semiconductors; two-stage MOCVD;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870694
Filename
4258907
Link To Document