Title :
High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes
Author :
Mala, Andrzej ; Jasik, Agata ; Teodorczyk, Marian ; Jagoda, Andrzej ; Kozlowska, Anna
Author_Institution :
Inst. of Electronic Mater. Technol., Warsaw
Abstract :
High-power double-barrier separate confinement heterostructure (SCH) GaAsP-AlGaAs-GaAs laser diodes designed for low vertical beam divergence emission at 800-nm band are presented. Insertion of thin wide-gap (low refractive index) barrier layers at the interfaces between the waveguide and cladding layers of an initial SCH causes an optical confinement weakening. As a result, the vertical divergences down to 16deg and 13deg have been obtained, depending on the design version. Similar threshold current densities, higher characteristic temperatures T0 compared to the high-power large optical cavity (LOC) lasers of comparable beam divergences and promising high-power performance make this design an alternative to LOC solution
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; laser beams; semiconductor lasers; stimulated emission; waveguide lasers; 800 nm; GaAsP-(AlGa)As laser diodes; GaAsP-AlGaAs; beam divergence emission; double-barrier-separate confinement heterostructure; high-power beam divergence; large optical cavity lasers; optical confinement; thin wide-gap barrier layers; threshold current densities; vertical beam divergence; waveguide-cladding layer interface; Diode lasers; Lab-on-a-chip; Laser beams; Optical design; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Stimulated emission; Threshold current; AlGaAs–GaAsP heterostructure; high-power lasers; laser beam divergence; laser diodes (LDs); optical planar waveguides; power conversion efficiency (pce);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.878142
