Title :
Out-diffusion and reactivation of Zn in InP substrates
Author :
Jung, H. ; Marschall, P.
Author_Institution :
AEG Aktiengesellschaft, Forschungsinstitut Ulm, Ulm, West Germany
Abstract :
The influence of temperature on p-doping in Zn-diffused InP substrates has been investigated. By cooling the diffused InP samples very slowly after diffusion or subjecting them to heat treatment, significant out-diffusion of Zn has been observed. By heat-treating with rapid cooling, a substantial fraction of the incorporated but electrically inactive Zn atoms can be reactivated, resulting in a drastically increased acceptor concentration.
Keywords :
III-V semiconductors; cooling; diffusion in solids; indium compounds; semiconductor doping; zinc; InP:Zn; cooling rate; heat-treating with rapid cooling; increased acceptor concentration; influence of temperature; out-diffusion; p-doping; reactivation; slow cooling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870708
