Title :
Voltage-controlled bipolar-MOS (VCBM) ring oscillator
Author_Institution :
Hewlett-Packard Co., Palo Alto, USA
Abstract :
17-stage VCBM ring oscillators have been fabricated. The VCBM device is an SOI device which operates both as a lateral bipolar and as an MOS transistor. Ring oscillators operate at supply voltages as low as 0.7 V and power-delay products per gate as low as 2.9 fJ are observed.
Keywords :
digital integrated circuits; integrated circuit technology; invertors; monolithic integrated circuits; variable-frequency oscillators; 0.7 V; 2.9 fJ; CMOS like circuit; SOI device; VCBM ring oscillators; combined bipolar MOS transistors; logic invertors; power-delay products; supply voltages; voltage controlled bipolar MOS VCO;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870717
