• DocumentCode
    1036437
  • Title

    Voltage-controlled bipolar-MOS (VCBM) ring oscillator

  • Author

    Colinge, J.P.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, USA
  • Volume
    23
  • Issue
    19
  • fYear
    1987
  • Firstpage
    1023
  • Lastpage
    1025
  • Abstract
    17-stage VCBM ring oscillators have been fabricated. The VCBM device is an SOI device which operates both as a lateral bipolar and as an MOS transistor. Ring oscillators operate at supply voltages as low as 0.7 V and power-delay products per gate as low as 2.9 fJ are observed.
  • Keywords
    digital integrated circuits; integrated circuit technology; invertors; monolithic integrated circuits; variable-frequency oscillators; 0.7 V; 2.9 fJ; CMOS like circuit; SOI device; VCBM ring oscillators; combined bipolar MOS transistors; logic invertors; power-delay products; supply voltages; voltage controlled bipolar MOS VCO;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870717
  • Filename
    4258953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036437