• DocumentCode
    1036535
  • Title

    Fully ion-implanted abrupt pn junction on semi-insulating InP

  • Author

    Wang, Ke-Wei ; Cheng, C.L. ; Zima, S.M.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    23
  • Issue
    20
  • fYear
    1987
  • Firstpage
    1040
  • Lastpage
    1041
  • Abstract
    We report a fully ion-implanted pn junction using Si for n-implant and P/Be co-implant for a shallow p+ surface layer. C/V measurements indicate abrupt junction behaviour. Mesa diodes were fabricated and showed an ideality factor of two, small leakage current and avalanche breakdown at reverse bias greater than 40 V.
  • Keywords
    III-V semiconductors; indium compounds; ion implantation; p-n homojunctions; semiconductor diodes; C-V measurements; III-V semiconductor; InP; InP:P,Be-InP:Si; avalanche breakdown; ideality factor; ion implanted abrupt p-n junction; leakage current; mesa diodes; shallow p+ surface layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870727
  • Filename
    4258964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036535