DocumentCode :
1036588
Title :
Quantum confined Stark shifts in MOVPE-grown GaAs-AlGaAs multiple quantum wells
Author :
Whitehead, Mark ; Parry, Guillaume ; Roberts, Jeffrey S. ; Mistry, Perhaad ; Li Kam Wa, P. ; David, J.P.R.
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Volume :
23
Issue :
20
fYear :
1987
Firstpage :
1048
Lastpage :
1050
Abstract :
We report the first observation of clear quantum confined Stark shifts in GaAs-AIGaAs quantum-well devices grown using metal-organic vapour-phase epitaxy.
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; excitons; gallium arsenide; photoconductivity; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; visible and ultraviolet spectra of inorganic solids; GaAs-AlGaAs multiple quantum wells; MOVPE; excitors; photocurrent spectra; quantum confined Stark shifts; semiconductor superlattices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870733
Filename :
4258970
Link To Document :
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