Analysis and simulation of domain propagation in nonuniformly doped bulk GaAs

A study of domain behavior in nonuniformly doped bulk semiconductor devices is undertaken, leading to a simple graphical technique useful for the analysis of these structures. Several device configurations are treated in this fashion and further examined with the aid of a digital computer program written by the author for simulation of the bulk effect in n-GaAs. The operation of these devices is illustrated with computer-generated graphic displays of electric field, carrier distribution, and device current as a function of time.