• DocumentCode
    1036888
  • Title

    Analysis of M-R elements for 108 bit/cm2 arrays

  • Author

    Pohm, A.V. ; Comstock, C.S. ; Daughton, J.M.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • Volume
    25
  • Issue
    5
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    4266
  • Lastpage
    4268
  • Abstract
    Magnetoresistive memory elements made from 100-Å thick, 65% Ni, 15% Fe, 20% Co layers separated by a 40-Å nonmagnetic layer have been analyzed theoretically. The analysis shows that with lithography capable of a minimum feature size of 0.4 μm and with the ability to deposit nonconducting magnetic keepers, memory arrays with a density of 108 bit/cm2 can be achieved. Analysis shows that such elements can lead to random access memories with an access time of 5 μs. In the case of plated conducting keepers, the element density is slightly diminished
  • Keywords
    magnetic film stores; magnetoresistance; 0.4 micron; 100 A; 40 A; 5 mus; M-R elements; Ni-Fe-Co; RAM; access time; element density; feature size; lithography; magnetoresistive memory elements; memory arrays; multimegabit memories; nonconducting magnetic keepers; plated conducting keepers; random access memories; Iron; Lithography; Magnetic analysis; Magnetic separation; Magnetoresistance; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.42590
  • Filename
    42590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036888