Title :
GaAs/AlGaAs rooftop reflector laser for optoelectronic integrated circuits
Author :
Chang-Joon Chae ; Young-Se Kwon
Author_Institution :
Korea Advanced Institute of Science & Technology, Department of Electrical Engineering, Seoul, Korea
Abstract :
A GaAs/AlGaAs laser, consisting of a cleaved facet and a chemically etched total-internal-reflecting rooftop reflector, is fabricated and tested. The results show that the rooftop reflector with the reflectivity exceeding 0.9 can be readily obtained and the laser is suitable for optoelectronic integrated circuits.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; GaAs-AlGaAs; cleaved facet; optoelectronic integrated circuits; rooftop reflector laser; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870780
