DocumentCode
1037082
Title
Monolithically integrated optical gate 2 Ã\x97 2 matrix switch using GaAs/AlGaAs multiple quantum well structure
Author
Ajisawa, A. ; Fujiwara, Masamichi ; Shimizu, J. ; Sugimoto, M. ; Uchida, M. ; Ohta, Yoshichika
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
23
Issue
21
fYear
1987
Firstpage
1121
Lastpage
1122
Abstract
A 2 × 2 optical matrix switch, monolithically integrating multiple-quantum-well-gate and optical circuits fabricated by the reactive-ion-beam etching method, is described. The switch size is small, 3 mm × 1.2 mm. Low crosstalk of 20 dB at 12 V is achieved.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; logic gates; optical couplers; optical information processing; sputter etching; switches; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum well structure; crosstalk; monolithically integrating multiple-quantum-well-gate; optical matrix switch; reactive-ion-beam etching; semiconductor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870782
Filename
4259020
Link To Document