• DocumentCode
    1037369
  • Title

    CMOS circuits made in thin SIMOX films

  • Author

    Colinge, J.P. ; Kamins, Theodore I.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, USA
  • Volume
    23
  • Issue
    21
  • fYear
    1987
  • Firstpage
    1162
  • Lastpage
    1164
  • Abstract
    MOS transistors and ring oscillators have been fabricated in thin (100 nm) SIMOX films. As has been theoretically predicted, no ´kink´ effect is observed in the n-channel devices, the inverse subthreshold slope is lower than in bulk devices (70mV/decade against HOmV/decade in bulk), and the dependence of threshold voltage on gate length is much less pronounced than in the bulk.
  • Keywords
    CMOS integrated circuits; oscillators; thin film transistors; CMOS circuits; MOS transistors; SOI MOSFET; n-channel devices; ring oscillators; thin SIMOX films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870810
  • Filename
    4259048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037369