Title :
An alternative derivation of the small-signal low-frequency admittance matrix for a semiconductor integrated circuit
Author :
Holt, A.G.J. ; Bowron, P.
fDate :
11/1/1969 12:00:00 AM
Abstract :
A four-layer monolithic semiconductor device is considered as a combination of p-n-p and an n-p-n transistor in order to derive more tangible rational approximate admittance parameters. One example of an external connection of such a device is evaluated.
Keywords :
Admittance; Cutoff frequency; Laser modes; Masers; Nonlinear optics; Optical attenuators; Optical filters; Optical modulation; Plasma waves; Polarization;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16891
