DocumentCode
1037401
Title
An alternative derivation of the small-signal low-frequency admittance matrix for a semiconductor integrated circuit
Author
Holt, A.G.J. ; Bowron, P.
Volume
16
Issue
11
fYear
1969
fDate
11/1/1969 12:00:00 AM
Firstpage
966
Lastpage
968
Abstract
A four-layer monolithic semiconductor device is considered as a combination of p-n-p and an n-p-n transistor in order to derive more tangible rational approximate admittance parameters. One example of an external connection of such a device is evaluated.
Keywords
Admittance; Cutoff frequency; Laser modes; Masers; Nonlinear optics; Optical attenuators; Optical filters; Optical modulation; Plasma waves; Polarization;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16891
Filename
1475933
Link To Document