Title :
Low-noise operation of buried channel MOS transistors
Author :
Carruthers, C. ; Mavor, J.
Author_Institution :
University of Edinburgh, Department of Electrical Engineering, Edinburgh, UK
Abstract :
Results are presented which show that extremely low-noise performance is possible in buried n-channel transistors. By careful choice of operating point, low-noise operation with useful gain is possible. The use of these devices as circuit elements is discussed.
Keywords :
electron device noise; insulated gate field effect transistors; semiconductor technology; buried channel MOS transistors; low-noise operation; low-noise performance; n-channel transistors; operating point;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870815
