• DocumentCode
    1037417
  • Title

    Low-noise operation of buried channel MOS transistors

  • Author

    Carruthers, C. ; Mavor, J.

  • Author_Institution
    University of Edinburgh, Department of Electrical Engineering, Edinburgh, UK
  • Volume
    23
  • Issue
    22
  • fYear
    1987
  • Firstpage
    1173
  • Lastpage
    1174
  • Abstract
    Results are presented which show that extremely low-noise performance is possible in buried n-channel transistors. By careful choice of operating point, low-noise operation with useful gain is possible. The use of these devices as circuit elements is discussed.
  • Keywords
    electron device noise; insulated gate field effect transistors; semiconductor technology; buried channel MOS transistors; low-noise operation; low-noise performance; n-channel transistors; operating point;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870815
  • Filename
    4259054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037417