• DocumentCode
    1037423
  • Title

    Comments on static negative resistance in avalanching silicon p+-i-n+junctions

  • Author

    Scharfetter, D.L. ; Bartelink, D.J. ; De Loach, B.C.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    16
  • Issue
    11
  • fYear
    1969
  • Firstpage
    970
  • Lastpage
    972
  • Abstract
    The dependence of calculated static space-charge-induced negative resistance, in avalanching silicon diodes, upon the form of the ionization rate function is investigated. It is shown that the conversion efficiency calculated using a commonly employed function for the ionization rate is greatly overestimated. It is concluded that the mechanism of static space-charge-induced negative resistance is not the origin of high efficiency modes of oscillation.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16893
  • Filename
    1475935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037423