Title :
Comments on static negative resistance in avalanching silicon p+-i-n+junctions
Author :
Scharfetter, D.L. ; Bartelink, D.J. ; De Loach, B.C.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Abstract :
The dependence of calculated static space-charge-induced negative resistance, in avalanching silicon diodes, upon the form of the ionization rate function is investigated. It is shown that the conversion efficiency calculated using a commonly employed function for the ionization rate is greatly overestimated. It is concluded that the mechanism of static space-charge-induced negative resistance is not the origin of high efficiency modes of oscillation.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16893
