• DocumentCode
    1037632
  • Title

    Negative-resistance diode power amplification

  • Author

    Hines, M.E.

  • Author_Institution
    Microwave Associates, Inc., Burlington, Mass.
  • Volume
    17
  • Issue
    1
  • fYear
    1970
  • fDate
    1/1/1970 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    An analysis is presented for the nonlinear behavior of power amplifiers utilizing negative-resistance diodes in a reflection circuit. The analysis applies to both stable and locked-oscillator modes of operation. Special emphasis is given to a simple model involving a cubic nonlinearity in the I-V relationship, and to the idealized LSA device in an amplification mode.
  • Keywords
    Circuits; Gallium arsenide; Gunn devices; Microwave amplifiers; Microwave devices; Microwave oscillators; Power amplifiers; Reflection; Semiconductor diodes; Varactors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.16916
  • Filename
    1476100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037632