A lumped model for characterizing single and multiple domain propagation in bulk GaAs

A study of the nucleation and propagation of single and multiple domains in n-GaAs has led to the development of a circuit oriented lumped model for the representation of this phenomenon. The lumped bulk model accurately predicts device behavior during domain nucleation, modulation and quenching, without indicating domain position within the bulk. The proposed equivalent circuit is developed in a logical fashion and its implications are pursued in some detail. Device studies with the lumped model have produced results exhibiting exceptional agreement with BULK-D, a digital computer program which determines the electric field and carrier distributions in bulk GaAs from current continuity considerations and Poisson´s equation.