Title :
Room-temperature operation of Ga0.47In0.53As/AI0.48In0.52As resonant tunnelling diodes
Author :
Sen, Satyaki ; Capasso, Federico ; Hutchinson, A.L.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The first room-temperature operation of Ga0.47In0.53As/Al0.48In0.52As resonant tunnelling (RT) diodes is reported. The peak/valley ratio of the current is as high as 4:1 at room temperature and is 15:1 at 80 K. These are the highest values of peak/valley ratio at the respective temperatures, reported so far, in this material system. The position of the peak in the current/voltage characteristic also showed good agreement with that obtained from an electron tunnelling transmission calculation.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; tunnel diodes; 80 degK; GaInAs-AlInAs; current/voltage characteristic; electron tunnelling transmission calculation; material system; peak/valley ratio; resonant tunnelling diodes; room-temperature operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870856
