Title :
High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers
Author :
Soda, H. ; Nakai, K. ; Ishikawa, Hiroshi ; Imai, H.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
GaInAsP/InP buried-heterostructure (BH) optical intensity modulators have been fabricated by the use of Fe-doped semi-insulating InP burying layers. The reduction of a parasitic capacitance due to the semi-insulating burying layers realised a wide modulation bandwidth of 11.2GHz. At a wavelength of 1.53/¿m, an attenuation ratio of 20 dB at 26°C was achieved with an applied voltage of ¿8.5 V.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical modulation; -8.5 V; 1.53 micron; 11.2 GHz; 26 degC; BH; GaInAsP-InP; InP:Fe; buried-heterostructure; optical intensity modulators; parasitic capacitance; semi-insulating burying layers; semiconductor; wide modulation bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870858
