DocumentCode :
1037831
Title :
Avalanche-induced 1/f noise in bipolar transistors
Author :
McDonald, Bruce A.
Author_Institution :
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, Calif
Volume :
17
Issue :
2
fYear :
1970
fDate :
2/1/1970 12:00:00 AM
Firstpage :
134
Lastpage :
136
Abstract :
It has been proposed that degradation of low current hFE , as a result of avalanching the emitter-base junction of a bipolar transistor, can be attributed to an increase in surface recombination velocity within the emitter-base space-charge region. This work shows that 1/ 
noise is also increased during avalanche and that this increase is consistent with a previously reported correlation between surface recombination velocity and 1/ noise.
noise is also increased during avalanche and that this increase is consistent with a previously reported correlation between surface recombination velocity and 1/ noise.Keywords :
Bipolar transistors; Current measurement; Diodes; Frequency; Integrated circuit noise; Noise measurement; P-n junctions; Stress; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16938
Filename :
1476122
Link To Document :
