• DocumentCode
    1037831
  • Title

    Avalanche-induced 1/f noise in bipolar transistors

  • Author

    McDonald, Bruce A.

  • Author_Institution
    Fairchild Semiconductor Research and Development Laboratory, Palo Alto, Calif
  • Volume
    17
  • Issue
    2
  • fYear
    1970
  • fDate
    2/1/1970 12:00:00 AM
  • Firstpage
    134
  • Lastpage
    136
  • Abstract
    It has been proposed that degradation of low current hFE, as a result of avalanching the emitter-base junction of a bipolar transistor, can be attributed to an increase in surface recombination velocity within the emitter-base space-charge region. This work shows that 1/ f noise is also increased during avalanche and that this increase is consistent with a previously reported correlation between surface recombination velocity and 1/ f noise.
  • Keywords
    Bipolar transistors; Current measurement; Diodes; Frequency; Integrated circuit noise; Noise measurement; P-n junctions; Stress; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.16938
  • Filename
    1476122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037831