Title :
Highly Strained 1.22-μ m InGaAs Lasers Grown by MOVPE
Author :
Chen, W.C. ; Su, Y.K. ; Chuang, R.W. ; Yu, H.C. ; Tsai, M.C. ; Cheng, K.Y. ; Horng, J.B. ; Hu, C. ; Tsau, Seth
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
In this work, the highly strained In0.39Ga0.61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 mum under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 mum. The characteristic temperature (To) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; transparency; vapour phase epitaxial growth; In0.39Ga0.61As-GaAs; continuous-wave conditions; highly strained lasers; metal-organic vapor phase epitaxy; temperature stability; threshold current density; transparency current density; wavelength 1.22 mum; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical materials; Quantum dot lasers; Semiconductor materials; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; InGaAs; lasers; metal–organic vapor phase epitaxy (MOVPE); photoluminescence (PL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.913745
