Title :
A Novel Ordered Nanopore Array Diode Laser
Author :
Elarde, V.C. ; Coleman, J.J.
Author_Institution :
Univ. of Illinois, Urbana-Champaign
Abstract :
In this work, we have created a new type of structure, the nanopore active layer, for achieving quantization of carrier states in a semiconductor. The nanopore structure consists of a periodic two-dimensional array of localized energy barriers perturbing an otherwise conventional quantum well. This perturbation leads to the formation of intraband forbidden energy gaps which are observed experimentally.
Keywords :
energy gap; nanoporous materials; nanotechnology; semiconductor laser arrays; carrier state quantization; diode laser; intraband forbidden energy gaps; localized energy barriers; nanopore active layer; nanopore structure; ordered nanopore array; periodic perturbation; periodic two-dimensional array; quantum well; Diode lasers; Dispersion; Free electron lasers; Lattices; Nanoporous materials; Optical arrays; Periodic structures; Quantization; Quantum dot lasers; Semiconductor laser arrays; Diode laser; nanopore; periodic perturbation; quantization; semiconductor laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.912978
